About Rafael Pezzi

Rafael Pezzi is the author of Flatus and Ionscattering.org. Rafael obtained his BSc, masters, and PhD degrees in physics at Universidade Federal do Rio Grande do Sul (UFRGS), Porto Alegre, Brazil. He also spent 20 months as a summer intern and post-doctoral researcher at IBM T.J. Watson Research Center in Yorktown Heights, USA between 2004 and 2008. Rafael spent over a year as a post-doctoral follow position at the Laboratory of Molecular Catalysis at UFRGS, in Porto Alegre. As of 2010 holds a full faculty position at the Physics Institute / UFRGS. In november 2016 joined the ALICE collaboration at CERN.

The author has experience on the development of advanced materials for microelectronic devices, nanotechnology and energy conversion. Rafael is also interested in Free and Open Knowledge, Open Source Hardware, Social Cloud Computing and high energy physics.

A selected list of his publications can be found below. His complete resume can be found at the Lattes platform.

Selected Publications (peer reviewed journals)

1 Pezzi, R.P.; Krug, C.; Grande, P.L.; Rosa, E.B.O. da; Schiwietz, G.; Baumvol, I.J.R. Analytical energy loss distribution for accurate high resolution depth profiling using medium energy ion scattering. Applied Physics Letters 92, 164102 (2008)

2 Radtke, C.; Stedile, F.C.; Soares, G.V.; Krug, C.; da Rosa, E.B.O.; Driemeier, C.; Baumvol, I.J.R.; Pezzi, R.P. Interaction of SiC thermal oxidation by-products with SiO2. Applied Physics Letters, 92, 252909 (2008)

3 Miotti, L; Pezzi, R.P.; Copel, M; Baumvol, I. J. R. Post deposition annealing of Hf aluminate films on Si investigated by ion backscattering and nuclear reaction analyses. Nuclear Instruments and Methods in Physics Research B - Beam Interactions With Materials and Atoms 266, 1162 (2008)

4 Driemeier, C; Pezzi, R.P.; Baumvol, I. J. R. Nuclear reaction analysis of H-1 and H-2 in hafnium silicate films on Si. Nuclear Instruments and Methods in Physics Research B - Beam Interactions With Materials and Atoms 266, 1824 (2008)

5 Pezzi, R.P.; Grande, P.L.; Copel, M. et al. Advanced ion energy loss models: Applications to subnanometric resolution elemental depth profiling. Surface Science 601, 5559 (2007)

6 Barradas, N.P.; Pezzi, R.P.; Baumvol, I.J.R. Use of the gamma function for straggling in simulation of RBS spectra. Nuclear Instruments and Methods in Physics Research B - Beam Interactions With Materials and Atoms 261, 422 (2007)

7 Grande, P. L. Hentz, A., Pezzi, R.P. An analytical energy-loss line shape for high depth resolution in ion-beam analysis. Nuclear Instruments and Methods in Physics Research B - Beam Interactions With Materials and Atoms 256, 92 (2007)

8 Miotti, L.; Pezzi, R.P., Copel, M. et al. Atomic transport and integrity of Al2O3(2.0 nm)/HfO2(2.5 nm) gate stacks on Si. Applied Physics Letters 90, 243509 (2007)

9 Pezzi, R.P.; Copel, M.; Gordon, M.; Cartier, E.; Baumvol, I.J.R. Oxygen transport and reaction mechanisms on rhenium gate contacts on hafnium oxide films on Si. Applied Physics Letters 88, 243509 (2006).

10 Jagannathan, H.; Nishi Y.; Reuter, M.; Copel, M.; Tutuc, E.; Guha, S.; Pezzi, R.P. Effect of oxide overlayer formation on the growth of gold catalyzed epitaxial silicon nanowires. Applied Physics Letters 88, 103113 (2006)

11 Copel, M., Pezzi, R.P., Neynayer, D., Jamison, P. Reduction of hafnium oxide and hafnium silicate by rhenium and platinum. Applied Physics Letters 88, 072914 (2006)

12 Driemeier, C., Miotti, L., Pezzi, R.P., Bastos, K.P., Baumvol, I.J.R. The use of narrow nuclear resonances in the study of alternative metal-oxide-semiconductor structures. Nuclear Instruments and Methods in Physics Research B - Beam Interactions With Materials and Atoms 249, 278 (2006)

13 Barradas, N. P.; Added, N.; Arnoldbik, W. M.; Bogdanovic-Radovic, I.; Bohne, W.; Cardoso S.; Danner, C.; Dytlewski, N.; Freitas, P. P.; Pezzi, R.P. et. al. A round robin characterization of the thickness and composition of thin to ultra-thin AlNO films. Nuclear Instruments and Methods in Physics Research B - Beam Interactions With Materials and Atoms 227, 397 (2005)

14 Pezzi, R.P.; Copel, M.; Cabral Jr., C.; Baumvol, I.J.R. Aluminum mobility and interfacial segregation in fully silicided gate contacts. Applied Physics Letters 87, 162902 (2005)

15 Copel, M.; Pezzi, R.P.; Cabral Jr., C. Interfacial segregation of dopants in fully silicided CMOS gates. Applied Physics Letters 86, 251904 (2005)

16 Pezzi, R.P.; Miotti, L.; Bastos, K.P. et al. Hydrogen and deuterium incorporation and transport in hafnium-based dielectric films on silicon. Applied Physics Letters 85, 3540 (2004)

17 Driemeier, C.; Bastos, K.P.; Soares, G.V.; Miotti, L.; Pezzi, R.P.; Baumvol, I.J.R. et al. Atomic transport and chemical stability of nitrogen in ultrathin HfSiON gate dielectrics. Applied Physics A, DOI: 10.1007/s00339-004-3037-8 (2004)

18 Bastos, K.P.; Pezzi, R.P.; Miotti, L. et al. Thermal stability of plasma-nitrided aluminum oxide on Si. Applied Physics Letters 84, 97 (2004)

19 Bastos, K.P.; Morais, J.; Miotti, L.; Soares, G.V.; Pezzi, R.P. et al. Thermal stability and electrical characterization of HfO2 films on thermally nitrided Si. Journal of the Electrochemical Society 151, 153 (2004)

20 Miotti, L.; Bastos, K.P.; Soares, G.V.; Driemeier, C. Pezzi, R.P.; Morais, J.; Baumvol, I.J.R.; Rotondaro, A.L.P. et al. Exchange-diffusion reactions in HfSiON during annealing studied by Rutherford backscattering spectrometry, nuclear reaction analysis and narrow resonant nuclear reaction profiling. Applied Physics Letters 85, 4460 (2004)

21 Soares, G.V.; Bastos, K.P.; Pezzi, R.P.; Miotti, L.; Driemeier, C; Baumvol, I.J.R.; Hinkle, C.; Lucovsky, G. Nitrogen bonding, stability and transport in AlON films on Si. Applied Physics Letters 84, 4992 (2004)

22 Miotti, L.; Bastos, K.P.; Pezzi, R.P.; Soares, G.V.; Driemeier, C.; Rosa, E.B.O. Da; Baumvol, I.J.R.; Morais, J. Thermal stability of nitrided high-k dielectrics. Phys. Stat. Sol 201, 870 (2004)

23 Bastos, K.P.; Driemeier, C.; Pezzi, R.P. et al. Thermal Stability of Hf-Based high-k dielectric films on silicon for advanced CMOS devices. Materials Science and Engineering B-Solid State Materials For Advanced Technology 112, 134 (2004)

24 Pezzi, R.P.; Morais, J.; Dahmen, S. R.; Bastos, K.P.; Miotti, L.; Soares, G.V.; Baumvol, I.J.R. Thermal behavior of hafnium-based ultrathin films on silicon. Journal of Vacuum Science and Technology A 24, 1424 (2003)

25 Morais, J.; Miotti, L.; Soares, G.V.; Pezzi, R.P.; Teixeira, S. R.; Bastos, K.P.; Baumvol, I.J.R.; Rotondaro, A. L. P.; Visokay, M.; Colombo, L. Integrity of hafnium silicate/silicon dioxide ultrathin films on Si. Applied Physics Letters 81, 2995 (2002)

26 Bastos, K.P.; Morais, J.; Miotti, L.; Pezzi, R.P.; Soares, G.V.; Baumvol, I.J.R.; Hedge, R. I.; Tseng, H. H.; Tobin, P. J. Oxygen reaction-diffusion in metalorganic chemical vapor deposition HfO2 films annealed in O2. Applied Physics Letters 81, 1669 (2002)

27 Pezzi, R.P.; Krug, C.; Rosa, E.B.O. da; Morais, J.; Miotti, L.; Baumvol, I.J.R. Ion beam studies of high-k ultrathin films deposited on Si. Nuclear Instruments and Methods in Physics Research B 190, 510 (2002)

28 Radtke, C.; Brandão, R. V.; Pezzi, R.P.; Morais, J.; Baumvol, I.J.R.; C.; S. F. Characterization of SiC thermal oxidation. Nuclear Instruments and Methods in Physics Research B 190, 579 (2002)

29 Rosa, E.B.O. da; Krug, C.; Radtke, C.; Pezzi, R.P.; Miotti, L.; Morais, J.; Baumvol, I.J.R.; C.; S. F. Surface and interface investigation of nanometric dielectric films on Si and on SiC. Surface Review and Letters 9, 393 (2002)

30 Landheer, D.; Wu, X.; Morais, J.; Baumvol, I.J.R.; Pezzi, R.P.; Miotti, L.; Lennard, W. N.; Kim, J. K. Thermal stability and diffusion in gadolinium silicate gate dielectrics films. Applied Physics Letters 79, 2618 (2001)

31 Morais, J.; Rosa, E.B.O. da; Pezzi, R.P.; Miotti, L.; Baumvol, I.J.R. Composition, atomic transport, and chemical stability of ZrAlxOy ultrathin films deposited on Si(001). Applied Physics Letters 79, 1998 (2001)

32 Rosa, E.B.O. da; Morais, J.; Pezzi, R.P.; Miotti, L.; Baumvol, I.J.R. Annealing of ZrAlxOy ultrathin films on Si in a vacuum or in O2. Journal of the Electrochemical Society 148, G695 (2001)

33 Morais, J.; Rosa, E.B.O. da; Miotti, L.; Pezzi, R.P.; Baumvol, I.J.R.; Rotondaro, A.L.P.; Bevan, M.J.; Colombo, L. Stability of zirconium silicate films on Si under vacuum and O2 annealing. Applied Physics Letters 78, 2446 (2001)